The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Mar. 08, 2011
Tsai-fu Hsiao, Hsin-Chu, TW;
Ching-i LI, Tainan, TW;
Po-yuan Chen, Kaohsiung, TW;
Chun-an Lin, Chiayi County, TW;
Hsiang-ying Wang, Chia-Yi Hsien, TW;
Chao-chun Chen, Kao-Hsiung, TW;
Chin-cheng Chien, Tainan, TW;
Tsai-Fu Hsiao, Hsin-Chu, TW;
Ching-I Li, Tainan, TW;
Po-Yuan Chen, Kaohsiung, TW;
Chun-An Lin, Chiayi County, TW;
Hsiang-Ying Wang, Chia-Yi Hsien, TW;
Chao-Chun Chen, Kao-Hsiung, TW;
Chin-Cheng Chien, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.