The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Feb. 15, 2007
Tsai-fu Hsiao, Hsin-Chu, TW;
Ching-i LI, Tainan County, TW;
Po-yuan Chen, Kao-Hsiung Hsien, TW;
Chun-an Lin, Chiayi County, TW;
Hsiang-ying Wang, Chia-Yi Hsien, TW;
Chao-chun Chen, Kao-Hsiung, TW;
Chin-cheng Chien, Tainan Hsien, TW;
Tsai-Fu Hsiao, Hsin-Chu, TW;
Ching-I Li, Tainan County, TW;
Po-Yuan Chen, Kao-Hsiung Hsien, TW;
Chun-An Lin, Chiayi County, TW;
Hsiang-Ying Wang, Chia-Yi Hsien, TW;
Chao-Chun Chen, Kao-Hsiung, TW;
Chin-Cheng Chien, Tainan Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing boron into the semiconductor substrate surrounding the spacer for forming a source/drain region. The weight ratio of each boron atom within the molecular cluster is preferably less than 10%. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the source/drain region.