Hsinchu, Taiwan

Po-Sheng Wang

USPTO Granted Patents = 8 

Average Co-Inventor Count = 4.4

ph-index = 1


Location History:

  • Hsinchu, TW (2022 - 2024)
  • Zhubei, TW (2024)

Company Filing History:


Years Active: 2022-2024

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8 patents (USPTO):

Title: Po-Sheng Wang: Innovator in Memory Device Technology

Introduction

Po-Sheng Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of eight patents. His work focuses on enhancing the efficiency and functionality of integrated circuits.

Latest Patents

Among his latest patents is a memory device and manufacturing method that features an integrated circuit with an input/output (I/O) circuit, a first memory segment, and a second memory segment. These segments are separated in a specific direction, with data lines configured to couple each memory segment to the I/O circuit. Another notable patent addresses the SRAM high-R issue in advanced technology nodes, which includes a memory array with multiple memory cells and write assist cells to improve performance.

Career Highlights

Po-Sheng Wang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

He has collaborated with notable colleagues, including Yangsyu Lin and Cheng Hung Lee, contributing to various projects that enhance memory device technology.

Conclusion

Po-Sheng Wang's contributions to memory device technology through his patents and collaborations highlight his role as an influential inventor in the semiconductor industry. His work continues to shape the future of integrated circuits and memory devices.

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