The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Sep. 24, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Po-Sheng Wang, Hsinchu, TW;

Chao Yuan Cheng, Hsinchu, TW;

Chien-Chi Tien, Hsinchu, TW;

Yangsyu Lin, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); H01L 27/02 (2006.01); H01L 27/118 (2006.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); H01L 27/0207 (2013.01); H01L 27/11807 (2013.01); G06F 2119/18 (2020.01); H01L 2027/11824 (2013.01); H01L 2027/11881 (2013.01);
Abstract

A method of forming an integrated circuit includes placing a first cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on the layout design. Placing the first cell layout design includes placing a first active region layout pattern adjacent to a first cell boundary, placing a second active region layout pattern adjacent to a second cell boundary, and placing a first set of active region layout patterns between the first and second active region layout patterns, according to a first set of guidelines. The first set of guidelines includes selecting transistors of a first type with a first driving strength and transistors of a second type with a second driving strength. In some embodiments, the first, second and first set of active region layout patterns extend in the first direction, and are on a first layout level.


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