The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Aug. 27, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yangsyu Lin, New Taipei, TW;

Po-Sheng Wang, Hsinchu, TW;

Cheng Hung Lee, Hsinchu, TW;

Jonathan Tsung-Yung Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); G11C 11/412 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/412 (2013.01); H10B 10/12 (2023.02); H10B 10/18 (2023.02);
Abstract

A memory device includes a memory array having a plurality of memory cells arranged along a plurality of rows extending in a row direction and a plurality of columns extending in a column direction. The memory array also includes a plurality of write assist cells connected to the plurality of memory cells. At least one write assist cell of the plurality of write assist cells is in each of the plurality of columns and connected to respective ones of the plurality of memory cells in a same column.


Find Patent Forward Citations

Lin, Yangsyu. (2023). Write assist cell for static random access memory (U.S. Patent No. 11756608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11756608

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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