Hsinchu County, Taiwan

Po-Hsien Yeh


Average Co-Inventor Count = 5.6

ph-index = 1


Company Filing History:


Years Active: 2025

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3 patents (USPTO):Explore Patents

Title: Po-Hsien Yeh: Innovator in High Electron Mobility Transistor Technology

Introduction

Po-Hsien Yeh is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors. With a total of 3 patents to his name, Yeh continues to push the boundaries of innovation in this critical area of electronics.

Latest Patents

Yeh's latest patents include advanced designs for high electron mobility transistor devices. One of his notable inventions features a high electron mobility transistor device that includes a channel layer, a first barrier layer, a gate structure, and a spacer. The first barrier layer is strategically placed on the channel layer, while the gate structure comprises a first P-type gallium nitride layer, a second barrier layer, and a second P-type gallium nitride layer. This innovative design allows for improved performance and efficiency in electronic applications. Another patent by Yeh also focuses on a high electron mobility transistor device, emphasizing the importance of the barrier layer's thickness in relation to the P-type gallium nitride layer.

Career Highlights

Po-Hsien Yeh is currently employed at Powerchip Semiconductor Manufacturing Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of high electron mobility transistors, which are essential for modern electronic devices.

Collaborations

Yeh collaborates with talented colleagues such as Jih-Wen Chou and Hsin-Hong Chen. Their combined efforts contribute to the innovative environment at Powerchip Semiconductor Manufacturing Corporation.

Conclusion

Po-Hsien Yeh is a prominent figure in the field of semiconductor technology, with a focus on high electron mobility transistors. His patents reflect his commitment to innovation and excellence in electronics. Through his work, he continues to influence the future of semiconductor applications.

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