Powerchip Semiconductor Manufacturing Corporation

Po-Hsien Yeh

Jih-Wen Chou

Yu-Jen Huang

Hsin-Hong Chen

Robin Christine Hwang

Chih-Hung Lu

Hwi-Huang Chen

Bo-An Tsai

Zheng-Chang Mu

A high electron mobility transistor device including a channel layer, a first barrier layer, a gate structure, and a spacer is provided. The first barrier layer is disposed on the channel layer. The gate structure is disposed on the first barrier layer. The gate structure includes a first P-type gallium nitride layer, a second barrier layer, and a second P-type gallium nitride layer. The first P-type gallium nitride layer is disposed on the first barrier layer. The second barrier layer is disposed on the first P-type gallium nitride layer. The second P-type gallium nitride layer is disposed on the second barrier layer. A width of the second P-type gallium nitride layer is smaller than a width of the first P-type gallium nitride layer. The spacer is disposed on a sidewall of the second P-type gallium nitride layer.

High electron mobility transistor device and manufacturing method thereof

A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

A GaN device with Npre-treatment is provided in the present invention, including a GaN substrate, an AlGaN layer covering the GaN substrate, a p-GaN gate on the AlGaN layer, a TiN electrode on the p-GaN gate, a first dielectric layer on the AlGaN layer surrounding the p-GaN gate, wherein a horizontal spacing is between the first dielectric layer and the p-GaN gate, and an interface between the AlGaN layer and the GaN substrate not covered by the first dielectric layer is subject to Npre-treatment, and a second dielectric layer covering on and directly contacting the exposed first dielectric layer, AlGaN layer, p-GaN gate and TiN electrode.

GaN device with N2 pre-treatment and method of performing Npre-treatment

Growing community of inventors

Hsinchu County, Taiwan

Po-Hsien Yeh