Company Filing History:
Years Active: 2022-2023
Title: Po-Hsien Chen: Innovator in Flash Memory Technology
Introduction
Po-Hsien Chen is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of flash memory technology, holding a total of 3 patents. His innovative methods have advanced the development of memory cells, which are crucial for modern electronic devices.
Latest Patents
Chen's latest patents focus on the formation of flash memory cells. One of his patents describes a method that includes depositing a first dielectric layer and a floating gate layer on a substrate. The process involves creating three blocking structures with oblique sidewalls that penetrate through the dielectric and floating gate layers. The method further details the etching of the floating gate layer to form two distinct floating gates, each with sharp top corners and oblique sidewalls. After the blocking structures are removed, isolating layers and selective gates are formed to complete the flash memory cell.
Career Highlights
Po-Hsien Chen is currently employed at United Microelectronics Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in enhancing the efficiency and performance of flash memory cells.
Collaborations
Chen collaborates with talented coworkers, including Ping-Chia Shih and Kuei-Ya Chuang. Their combined expertise contributes to the advancement of technology in their field.
Conclusion
Po-Hsien Chen's contributions to flash memory technology exemplify his innovative spirit and dedication to advancing electronic memory solutions. His patents reflect a deep understanding of semiconductor processes and a commitment to improving technology.