The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2022

Filed:

Jan. 14, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wen-Lin Wang, Kaohsiung, TW;

Ping-Chia Shih, Tainan, TW;

Ming-Che Tsai, Tainan, TW;

Kuei-Ya Chuang, Chiayi County, TW;

Yi-Chun Teng, Taichung, TW;

Po-Hsien Chen, Tainan, TW;

Wan-Chun Liao, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/576 (2013.01); H01L 21/76883 (2013.01); H01L 21/823475 (2013.01); H01L 23/5226 (2013.01); H01L 27/088 (2013.01);
Abstract

A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.


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