The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Dec. 07, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Chia-Min Hung, Tainan, TW;
Ping-Chia Shih, Tainan, TW;
Che-Hao Kuo, Tainan, TW;
Kuei-Ya Chuang, Chiayi County, TW;
Ssu-Yin Liu, Kaohsiung, TW;
Po-Hsien Chen, Tainan, TW;
Wan-Chun Liao, Hsinchu County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.