United Microelectronics Corp.

Po-Hsien Chen

Ping-Chia Shih

Wan-Chun Liao

Kuei-Ya Chuang

Chia-Min Hung

Ssu-Yin Liu

Che-Hao Kuo

Wen-Lin Wang

Yi-Chun Teng

Ming-Che Tsai

A method of forming a flash memory cell includes the following steps. A first dielectric layer and a floating gate layer are deposited on a substrate sequentially. Three blocking structures having oblique sidewalls broaden from bottom to top penetrating through the first dielectric layer and the floating gate layer are formed. A first part and a second part of the floating gate layer between two adjacent blocking structures are etched respectively, so that a first floating gate having two sharp top corners and oblique sidewalls, and a second floating gate having two sharp top corners and oblique sidewalls, are formed. The three blocking structures are removed. A first isolating layer and a first selective gate covering the first floating gate are formed and a second isolating layer and a second selective gate covering the second floating gate are formed. A flash memory cell formed by said method is also provided.

Flash memory cell

Flash memory cell and forming method thereof

A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.

Device for generating security key and manufacturing method thereof

Growing community of inventors

Tainan, Taiwan

Po-Hsien Chen