Peter Tuerkes

Title: Peter Tuerkes: Innovator in Power Semiconductor Technology

Introduction

Peter Tuerkes is a notable inventor based in Unterhaching, Germany. He has made significant contributions to the field of power semiconductor devices, holding a total of 8 patents. His work focuses on enhancing the efficiency and safety of power electronics.

Latest Patents

Among his latest innovations is a power semiconductor device with integrated temperature protection. This device features a substrate that includes a power field effect transistor (FET) and a thermosensitive element. The design allows for the load current to be controllable during operation, with the thermosensitive element configured to reduce the load current if a limit temperature is exceeded. Another significant patent is for an insulated gate bipolar transistor (IGBT) that incorporates a negative temperature coefficient thermistor. This IGBT design enhances performance by ensuring stability and reliability in varying temperature conditions.

Career Highlights

Peter Tuerkes has worked with prominent companies in the semiconductor industry, including Siemens Aktiengesellschaft and Infineon Technologies Austria AG. His experience in these organizations has allowed him to develop and refine his innovative ideas in power semiconductor technology.

Collaborations

Throughout his career, Tuerkes has collaborated with esteemed colleagues such as Reinhold Kuhnert and Stephan Voss. These partnerships have contributed to the advancement of his projects and the successful development of his patents.

Conclusion

Peter Tuerkes stands out as a key figure in the field of power semiconductor technology. His innovative patents and collaborations reflect his commitment to advancing this critical area of electronics.