The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jul. 25, 2013
Infineon Technologies Ag, Neubiberg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A transistor device comprises: at least one individual transistor cell arranged in a transistor cell field on a semiconductor body, each individual transistor cell comprising a gate electrode; a gate contact, electrically coupled to the gate electrodes of the transistor cells and configured to switch on the at least one transistor cell by providing a gate current in a first direction and configured to switch off the at least one transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction; at least one gate-resistor structure monolithically integrated in the transistor device, the gate-resistor structure providing a first resistance for the gate current when the gate current flows in the first direction, and providing a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction.