The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Apr. 21, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Stephan Voss, Munich, DE;

Peter Tuerkes, Unterhaching, DE;

Holger Huesken, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01); H01L 27/07 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/435 (2013.01); H01L 27/0629 (2013.01); H01L 27/075 (2013.01); H01L 27/0727 (2013.01);
Abstract

A transistor device includes an individual transistor cell arranged in a transistor cell field on a semiconductor body, the individual transistor cell having a gate electrode. The transistor device further includes a gate contact, electrically coupled to the gate electrode and configured to switch on the individual transistor cell by providing a gate current in a first direction and configured to switch off the individual transistor cell by providing a gate current in a second direction, the second direction being opposite to the first direction. The transistor device also includes a gate-resistor structure monolithically integrated in the transistor device. The gate-resistor structure provides a first resistance for the gate current when the gate current flows in the first direction, and provides a second resistance for the gate current, which is different from the first resistance, when the gate current flows in the second direction.


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