Peter S Lyman

Title: Peter S Lyman: Innovator in Semiconductor Technology

Introduction

Peter S Lyman is a notable inventor based in Mendon, MA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on advanced semiconductor structures and fabrication methods.

Latest Patents

Lyman's latest patents include innovations in quaternary-ternary semiconductor devices. This patent describes a semiconductor structure featuring a III-V substrate and a buffer layer with a compositional graded quaternary lower portion and a compositional graded ternary upper portion. In one embodiment, the lower portion of the buffer layer is compositional graded AlGaInAs, while the upper portion is compositional graded AlInAs. Another significant patent is related to multi-layer wafer fabrication. This invention outlines a method for fabricating a wafer by growing a single crystal layer comprising a III-V compound in a first chamber at elevated temperatures. The process involves reducing the temperature of the single crystal layer and depositing an indium arsenide layer, followed by transferring the intermediate structure to a second chamber for further processing.

Career Highlights

Peter S Lyman is associated with Raytheon Company, where he has contributed to various projects in semiconductor technology. His expertise in this field has led to advancements that enhance the performance and efficiency of semiconductor devices.

Collaborations

Lyman has collaborated with notable colleagues, including William E Hoke and John J Mosca. These partnerships have fostered innovation and development in their respective projects.

Conclusion

Peter S Lyman's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the field significantly.