The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2002
Filed:
Apr. 09, 1999
William E. Hoke, Wayland, MA (US);
Peter S. Lyman, Mendon, MA (US);
John J. Mosca, Carlisle, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
The invention provides a method of fabricating a wafer including growing a single crystal layer comprising a III-V compound in a first chamber at a temperature above 350° C. A temperature of a surface of the single crystal layer is reduced to below about 350° C. in the first chamber. An indium arsenide layer is deposited on the single crystal layer, to form an intermediate structure, in the first chamber at a temperature below 350° C. and above 100° C. The intermediate structure is transferred to a second chamber. A surface of the intermediate structure is heated to a temperature above about 600° C. to remove substantially all of the indium arsenide layer and impurities collected in the indium arsenide layer during the transfer to the second chamber. Another material is deposited on the single crystal layer in the second chamber.