John J Mosca

Title: John J Mosca: Innovator in Semiconductor Technology

Introduction

John J Mosca is a prominent inventor based in Carlisle, MA (US), known for his contributions to semiconductor technology. With a total of 2 patents, he has made significant advancements in the field, particularly in the development of high electron mobility transistors and wafer fabrication methods.

Latest Patents

Mosca's latest patents include a Gallium nitride high electron mobility transistor structure. This innovative semiconductor structure comprises a substrate, a first aluminum nitride (AlN) layer with an aluminum/reactive nitride (Al/N) flux ratio less than 1, and a second AlN layer with an Al/reactive N flux ratio greater than 1. The substrate is a compound of silicon, and the first AlN layer is substantially free of silicon. Another notable patent is for a multi-layer wafer fabrication method. This invention outlines a process for growing a single crystal layer comprising a III-V compound in a first chamber at a temperature above 350°C, followed by a series of temperature adjustments and material deposits to create an intermediate structure.

Career Highlights

John J Mosca is currently associated with Raytheon Company, where he applies his expertise in semiconductor technology. His work has contributed to advancements in electronic devices and systems, enhancing performance and efficiency.

Collaborations

Throughout his career, Mosca has collaborated with notable colleagues, including William E Hoke and Peter S Lyman. These partnerships have fostered innovation and the sharing of ideas within the field.

Conclusion

John J Mosca's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic systems and materials.