The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2004
Filed:
Dec. 05, 2002
Applicant:
Inventors:
William E. Hoke, Wayland, MA (US);
Peter S. Lyman, Mendon, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ; H01L 3/526 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ; H01L 3/526 ;
Abstract
A semiconductor structure is provided having a III-V substrate, a buffer layer over the substrate, such buffer layer having a compositional graded quaternary lower portion and a compositional graded ternary upper portion. In one embodiment, the lower portion of the buffer layer is compositional graded AlGaInAs and the upper portion is compositional graded AlInAs.