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Scottsdale, AZ, United States of America

Peng-Fu Hsu

This inventor holds 12 USPTO granted patents and 2 published patent applications. Top assignee: Asm IP Holding B.v.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peng-Fu Hsu. Retrieved from https://idiyas.com/inventor/peng-fu-hsu-4zp7pmum

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 12 (Patent Applications = 2)

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 4(Granted Patents)

Company Filing History:

12 out of 1,338

Asm IP Holding B.v.

Years Active: 2020-2026

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12525451 - Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures (2026-01-13),

2. 12094936 - Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures (2024-09-17),

3. 12020938 - Method of forming an electrode on a substrate and a semiconductor device structure including an electrode (2024-06-25),

4. 11923192 - Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures (2024-03-05),

5. 11798999 - Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures (2023-10-24),

6. 11469098 - Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures (2022-10-11),

7. 11411088 - Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures (2022-08-09),

8. 11398382 - Method of forming an electrode on a substrate and a semiconductor device structure including an electrode (2022-07-26),

9. 11056567 - Method of forming a doped metal carbide film on a substrate and related semiconductor device structures (2021-07-06),

10. 10886123 - Methods for forming low temperature semiconductor layers and related semiconductor device structures (2021-01-05),

11. 10847371 - Method of forming an electrode on a substrate and a semiconductor device structure including an electrode (2020-11-24),

12. 10818758 - Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures (2020-10-27),

Title: The Inventor Profile of Peng-Fu Hsu

Introduction: Peng-Fu Hsu is a renowned inventor based in Scottsdale, Arizona, known for his groundbreaking contributions to various technological fields.

Latest Patents: Peng-Fu Hsu holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Peng-Fu Hsu has worked with leading research institutions and technology companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Peng-Fu Hsu has collaborated with top engineers, scientists, and researchers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Peng-Fu Hsu's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of various industries.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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