The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
May. 09, 2018
Methods for forming low temperature semiconductor layers and related semiconductor device structures
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Petri Raisanen, Gilbert, AZ (US);
Moataz Bellah Mousa, Chandler, AZ (US);
Peng-Fu Hsu, Scottsdale, AZ (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0234 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02205 (2013.01); H01L 21/02389 (2013.01); H01L 21/32051 (2013.01);
Abstract
A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NHradicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.