The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Jul. 07, 2022
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Moataz Bellah Mousa, Chandler, AZ (US);

Peng-Fu Hsu, Scottsdale, AZ (US);

Ward Johnson, Gilbert, AZ (US);

Petri Raisanen, Gilbert, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01); H01L 21/285 (2013.01); H01L 28/60 (2013.01); H01L 29/4966 (2013.01); H10B 12/03 (2023.02);
Abstract

A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.


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