The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Sep. 21, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Fu Tang, Gilbert, AZ (US);

Peng-Fu Hsu, Scottsdale, AZ (US);

Michael Eugene Givens, Phoenix, AZ (US);

Qi Xie, Wilsele, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); C23C 16/40 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); C23C 16/401 (2013.01); C23C 16/403 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02145 (2013.01); H01L 21/02205 (2013.01); H01L 21/28158 (2013.01); H01L 29/161 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.


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