Patrice Gergaud

Title: The Innovations of Patrice Gergaud

Introduction

Patrice Gergaud is a notable inventor based in La Buisse, France. He has made significant contributions to the field of microelectronics, particularly through his innovative patents. With a total of 3 patents, Gergaud's work focuses on advanced manufacturing processes and device technologies.

Latest Patents

One of his latest patents involves a process for manufacturing an intermetallic contact on the surface of a layer or substrate of oriented InGaAs material. This contact includes an Ni–InGaAs intermetallic compound, which has a hexagonal crystallographic structure. The process outlines several steps, including the production of nomograms that define the time required to consume the initial thickness of Ni based on the annealing temperature. Another significant patent is a manufacturing method for a microelectronic device with transistors that utilize silicided source and drain zones to apply a compressive strain on the channel in certain transistors.

Career Highlights

Throughout his career, Patrice Gergaud has worked with prestigious organizations such as the Commissariat à l'énergie atomique et aux énergies alternatives. His expertise in microelectronics has allowed him to develop innovative solutions that enhance device performance and manufacturing efficiency.

Collaborations

Gergaud has collaborated with notable colleagues, including Fabrice Nemouchi and Thierry Poiroux. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Patrice Gergaud's contributions to the field of microelectronics through his patents and collaborations highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future innovations.