Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Patrice Gergaud

Fabrice Nemouchi

Thierry Poiroux

Bernard Previtali

Philippe Rodriguez

Seifeddine Zhiou

Guillaume Freychet

Jérôme Reche

Liliane Alrifai

Yoann Blancquaert

A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InGaAs material, the contact includes an Ni&#x2014;InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InGaAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.

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A method for making a microelectronic device with transistors, in which silicided source and drain zones are formed to apply a compressive strain on the channel, in some transistors.

Manufacturing method for a device with transistors strained by silicidation of source and drain zones

A method of producing a microelectronic device with transistors wherein a strain layer is formed on a series of transistors and the strain exerted on at least one given transistor of said series is released by removing a sacrificial layer situated between said given transistor and said strain layer.

Method of producing a device with transistors strained by means of an external layer

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La Buisse, France

Patrice Gergaud