The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Aug. 22, 2012
Applicants:
Fabrice Nemouchi, Moirans, FR;
Patrice Gergaud, La Buisse, FR;
Thierry Poiroux, Voiron, FR;
Bernard Previtali, Grenoble, FR;
Inventors:
Fabrice Nemouchi, Moirans, FR;
Patrice Gergaud, La Buisse, FR;
Thierry Poiroux, Voiron, FR;
Bernard Previtali, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing a microelectronic device with transistors wherein a strain layer is formed on a series of transistors and the strain exerted on at least one given transistor of said series is released by removing a sacrificial layer situated between said given transistor and said strain layer.
Nemouchi, Fabrice. (2014). Method of producing a device with transistors strained by means of an external layer (U.S. Patent No. 8664104). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8664104
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile