San Diego, CA, United States of America

Parissa Najdesamii

This inventor holds 6 USPTO granted patents and 2 published patent applications and 2 EPO patents. Top assignee: Qualcomm Incorporated. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Parissa Najdesamii. Retrieved from https://idiyas.com/inventor/parissa-najdesamii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 66.7

 

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2014-2026

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6 patents (USPTO):Explore Patents

Title: Parissa Najdesamii: Innovator in MOS Device Technology

Introduction

Parissa Najdesamii is a prominent inventor based in San Diego, CA. She has made significant contributions to the field of semiconductor technology, particularly in the design of MOS devices. With a total of 6 patents to her name, her work focuses on improving efficiency and reducing routing congestion in integrated circuits.

Latest Patents

One of her latest patents is titled "Methods and apparatus for using split N-well cells in a merged N-well block." This invention addresses the challenges of routing congestion caused by split n-well cells in merged n-well circuit blocks. The patent describes a MOS device that includes a first set of cells arranged in a specific direction, along with a second set of cells that are strategically positioned to optimize performance. Another notable patent is "Multi supply cell arrays for low power designs." This invention features standard cells designed to minimize routing congestion while maximizing area efficiency. The configuration allows for effective power distribution and maintains the integrity of horizontal routing tracks.

Career Highlights

Parissa Najdesamii is currently employed at Qualcomm Incorporated, a leading company in the semiconductor industry. Her role involves developing innovative solutions that enhance the performance of MOS devices. Her expertise in this area has positioned her as a valuable asset to her team and the company.

Collaborations

Throughout her career, Parissa has collaborated with talented individuals such as Paras Gupta and Ramaprasath Vilangudipitchai. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Parissa Najdesamii is a trailblazer in the field of semiconductor technology, with a focus on MOS device innovations. Her contributions through her patents and work at Qualcomm Incorporated highlight her commitment to advancing the industry. Her achievements serve as an inspiration for future inventors in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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