Company Filing History:

9 out of 941

Sgs-Thomson Microelectronics S.r.l.

patents

3 out of 5,585

Stmicroelectronics S.r.l.

patents

Years Active: 1992-2005

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6876033 - Electrically erasable and programmable non-volatile memory cell (2005-04-05),

2. 6812531 - Matrix of memory cells fabricated by means of a self-aligned source process, comprising ROM memory cells, and related manufacturing process (2004-11-02),

3. 6670229 - Bipolar transistor produced using processes compatible with those employed in the manufacture of MOS device (2003-12-30),

4. 6188121 - High voltage capacitor (2001-02-13),

5. 5600590 - Process for the manufacture of an integrated voltage limiter and (1997-02-04),

6. 5553017 - Electrically erasable and programmable read-only memory cells with a (1996-09-03),

7. 5527728 - Method of making thin oxide portions consisting of gate and tunnel (1996-06-18),

8. 5486486 - Process for the manufacture of an integrated voltage limiter and (1996-01-23),

9. 5393684 - Method of making thin oxide portions particularly in electrically (1995-02-28),

10. 5367483 - Electrically erasable and programmable read-only memory cells with a (1994-11-22),

11. 5322803 - Process for the manufacture of a component to limit the programming (1994-06-21),

12. 5132239 - Process for manufacturing EEPROM memory cells having a single level of (1992-07-21),

Title: The Innovative Mind of Paolo Ghezzi: A Trailblazer in Memory Technology

Introduction

Paolo Ghezzi, an accomplished inventor from Rivolta d'Adda, Italy, has made significant contributions to the field of memory technology. With a remarkable portfolio of 12 patents, he has dedicated his career to advancing innovations that enhance electronic devices and their capabilities.

Latest Patents

Among his latest patents, the "Electrically erasable and programmable non-volatile memory cell" stands out. This invention encompasses a memory cell featuring a floating gate MOS transistor alongside a bipolar transistor designed for electric charge injection. The architecture includes a floating gate that extends over the channel and control gate region, ensuring effective memory management. Additionally, Ghezzi's patent related to a "Matrix of memory cells fabricated by means of a self-aligned source process" reveals a method allowing self-alignment of respective source regions, resulting in improved efficiency for ROM memory cells. Together, these patents reflect Ghezzi's commitment to pushing the boundaries of memory technology.

Career Highlights

Paolo Ghezzi has held pivotal roles at prominent technology firms such as SGS-Thomson Microelectronics S.r.l. and STMicroelectronics S.r.l. Through his work, he has driven the development of innovative memory solutions that play a crucial role in contemporary electronic devices. His passion for technology and dedication to his craft clearly demonstrate his status as a key player in the field of inventiveness.

Collaborations

During his impressive career, Ghezzi has collaborated with talented individuals, including Carlo Riva and Alfonso Maurelli. These partnerships have fostered an environment of creativity and innovation, allowing Ghezzi to capitalize on collective expertise in the development of groundbreaking technologies.

Conclusion

Paolo Ghezzi's extensive patent portfolio and contributions to the field of memory technology underscore his significance as an inventor. His latest innovations not only highlight his technical skills but also his vision for the future of electronics. As he continues to explore new frontiers in technology, Ghezzi remains a beacon of inspiration for aspiring inventors and those captivated by the world of innovative inventions.

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