The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2001
Filed:
Jul. 20, 1998
Applicant:
Inventors:
Assignee:
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
A high voltage capacitor, integratable monolithically on a semiconductor substrate which accommodates a field oxide region overlaid by a first layer of polycrystalline silicon isolated from a second layer of polycrystalline silicon by an interpoly dielectric layer, comprises two elementary capacitors having a first common conductive plate which is formed in the first layer of polycrystalline silicon. Each of these elementary capacitors has a second conductive plate formed in the second layer of polycrystalline silicon above the first plate, and includes said interpoly dielectric layer as an isolation dielectric between the two plates.