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For the Inventor, By the Inventor

Milan, Italy

Paola Zuliani

This inventor holds 17 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Non-Volatile Memory. Top assignees: Stmicroelectronics S.r.l., Stmicroelectronics (Crolles 2) Sas, Other. Active years: 2002-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paola Zuliani. Retrieved from https://idiyas.com/inventor/paola-zuliani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 82.4

 

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 48(Granted Patents)


Location History:

  • Milano, IT (2008)
  • Milano (MI), IT (2009)
  • 20041 Agrate Brianza, IT (2011)
  • Milan, IT (2002 - 2022)

Company Filing History:

goldMedal14 out of 5,694 
 
Stmicroelectronics S.r.l.
 patents
silverMedal2 out of 781 
 
Stmicroelectronics (Crolles 2) Sas
 patents
bronzeMedal3 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2022

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Areas of Expertise:
Phase Change Memory
Non-Volatile Memory
EEPROM Architecture
Transistor Manufacturing
Bipolar Junction Transistors
Memory Device
Voltage Generator
Byte Selection Transistor
Chip Outline Band
Field-Effect Transistor
Memory Cell Matrix
Semiconductor Device
17 patents (USPTO):Explore Patents
1. 11462269 - Phase change memory device and method of programming a phase change memory device (2022-10-04),
2. 10903423 - Phase change memory (2021-01-26),
3. 10706924 - Non-volatile memory device, in particular phase change memory, and reading method (2020-07-07),
4. 10510955 - Phase change memory (2019-12-17),
5. 9991316 - Phase-change memory cell, and method for manufacturing the phase-change memory cell (2018-06-05),
6. 7875513 - Self-aligned bipolar junction transistors (2011-01-25),
7. 7663927 - Reading voltage generator for a non-volatile EEPROM memory cell matrix of a semiconductor device and corresponding manufacturing process (2010-02-16),
8. 7649786 - Non-volatile memory architecture and method, in particular of the EEPROM type (2010-01-19),
9. 7483296 - Memory device with unipolar and bipolar selectors (2009-01-27),
10. 7456467 - Process for manufacturing a byte selection transistor for a matrix of non volatile memory cells and corresponding structure (2008-11-25),
11. 6972454 - Process for manufacturing a byte selection transistor for a matrix of non volatile memory cells and corresponding structure (2005-12-06),
12. 6949803 - Manufacturing process for a high voltage transistor integrated on a semiconductor substrate with non-volatile memory cells and corresponding transistor (2005-09-27),
13. 6803630 - Method of adjusting program voltage in non-volatile memories, and process for fabricating a non-volatile memory device (2004-10-12),
14. 6737715 - Field-effect transistor and corresponding manufacturing method (2004-05-18),
15. 6535431 - Method of adjusting program voltage in non-volatile memories, and process for fabricating a non-volatile memory device (2003-03-18),

Title: Paola Zuliani: Innovator in Phase Change Memory Technology

Introduction

Paola Zuliani is a prominent inventor based in Milan, Italy. She has made significant contributions to the field of memory technology, particularly in phase change memory devices. With a total of 17 patents to her name, Zuliani has established herself as a leading figure in her area of expertise.

Latest Patents

Among her latest innovations is a phase change memory device and method of programming it. This device features a memory array with multiple phase-change memory cells. Each cell consists of a body made of phase-change material, which can exist in a first state where it is entirely amorphous, and at least one second state where it is partially amorphous and partially crystalline. The programming-pulse generator applies rectangular dynamic-programming pulses to switch the memory cells from the first state to the second state. Another notable patent involves a phase change memory that includes an L-shaped resistive element. This element extends between a layer of phase change material and a conductive via, with its upper part surrounded by insulating material that does not react adversely with the resistive element's metal material.

Career Highlights

Zuliani has worked with Stmicroelectronics S.r.l., where she has further honed her skills and contributed to groundbreaking projects. Her work has been instrumental in advancing the capabilities of phase change memory technology.

Collaborations

Throughout her career, Zuliani has collaborated with notable professionals in her field, including Federico Pio and Roberto Annunziata. These collaborations have enriched her work and led to innovative solutions in memory technology.

Conclusion

Paola Zuliani's contributions to phase change memory technology highlight her role as a key innovator in the field. Her patents and collaborations reflect her commitment to advancing technology and her impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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