The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Apr. 16, 2018
Applicants:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Stmicroelectronics S.r.l., Agrate Brianza (MB), IT;
Inventors:
Assignees:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/126 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 27/2472 (2013.01); H01L 45/06 (2013.01); H01L 45/065 (2013.01); H01L 45/124 (2013.01); H01L 45/1233 (2013.01); H01L 45/1293 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01);
Abstract
A phase change memory includes an L-shaped resistive element having a first part that extends between a layer of phase change material and an upper end of a conductive via and a second part that rests at least partially on the upper end of the conductive via and may further extend beyond a peripheral edge of the conductive via. The upper part of the conductive via is surrounded by an insulating material that is not likely to adversely react with the metal material of the resistive element.