The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Apr. 26, 2006
Fabio Pellizzer, 31051 Follina, IT;
Roberto Bez, 20041 Agrate Brianza, IT;
Paola Zuliani, 20041 Agrate Brianza, IT;
Augusto Benvenuti, 20041 Agrate Brianza, IT;
Fabio Pellizzer, 31051 Follina, IT;
Roberto Bez, 20041 Agrate Brianza, IT;
Paola Zuliani, 20041 Agrate Brianza, IT;
Augusto Benvenuti, 20041 Agrate Brianza, IT;
Other;
Abstract
A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a plurality of silicide protection strips, and at least one control contact region. Silicide regions are formed on the second conduction regions and the control contact region. The second conduction regions may be formed by selectively implanting a first conductivity type dopant areas on a first side of selected silicide protection strips. The control contact region is formed by selectively implanting an opposite conductivity type dopant on a second side of the selected silicide protection strips.