Hefei, China

Pan Wang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Pan Wang - Innovator in Semiconductor Technology

Introduction

Pan Wang is a notable inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative methods in this area.

Latest Patents

His latest patents include a "Method for forming active area" and a "Method for forming semiconductor structure." The method for forming the active area involves several operations, including providing a semiconductor substrate and sequentially forming a first mask layer and a second mask layer on its surface. The second mask layer has an initial pattern for forming the active area. A sacrificial layer is then formed to cover the second mask layer, which is subsequently removed along with a portion of the second mask layer to create a third mask layer with a preset thickness. This process ultimately leads to the formation of the active area through the third mask layer and the first mask layer. The method for manufacturing the semiconductor structure includes providing a substrate with active and isolation regions, forming grooves in the active regions, and creating gate structures within these grooves.

Career Highlights

Pan Wang is currently employed at Changxin Memory Technologies, Inc., where he continues to advance semiconductor technology through his innovative work. His expertise in the field has positioned him as a valuable asset to his company.

Collaborations

He collaborates with talented coworkers, including Wei Wan and Xuesheng Wang, who contribute to the innovative environment at Changxin Memory Technologies, Inc.

Conclusion

Pan Wang's contributions to semiconductor technology through his patents and work at Changxin Memory Technologies, Inc. highlight his role as a key innovator in the industry. His methods for forming active areas and semiconductor structures are paving the way for advancements in this critical field.

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