The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 21, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A method for forming the active area includes the following operations. A semiconductor substrate is provided. A first mask layer and a second mask layer are sequentially formed on a surface of the semiconductor substrate, in which the second mask layer has an initial pattern for forming the active area. A sacrificial layer covering the second mask layer is formed. The sacrificial layer and a portion of the second mask layer are removed to form a third mask layer with a preset thickness, in which the preset thickness is less than an initial thickness of the second mask layer. The active area is formed through the third mask layer and the first mask layer.