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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12387932 B1

PDFFull Text
Date of Patent:
Aug. 12, 2025

Filed:

Apr. 21, 2022

Method for forming active area and method for forming semiconductor structure

Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yang Liu, Hefei, CN;

Wei Wan, Hefei, CN;

Pan Wang, Hefei, CN;

Assignee:

CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/768 (2013.01);
Abstract

A method for forming the active area includes the following operations. A semiconductor substrate is provided. A first mask layer and a second mask layer are sequentially formed on a surface of the semiconductor substrate, in which the second mask layer has an initial pattern for forming the active area. A sacrificial layer covering the second mask layer is formed. The sacrificial layer and a portion of the second mask layer are removed to form a third mask layer with a preset thickness, in which the preset thickness is less than an initial thickness of the second mask layer. The active area is formed through the third mask layer and the first mask layer.

Find Patent Forward Citations

Liu, Yang. (2025). Method for forming active area and method for forming semiconductor structure (U.S. Patent No. 12387932). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12387932

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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