The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Sep. 30, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/40 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 29/401 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/4238 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02);
Abstract
A method for manufacturing the semiconductor structure includes: providing a substrate, in which active regions and isolation regions are formed; forming grooves in the active regions, which include first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves; and forming gate structures in the first grooves and the second grooves.