Changxin Memory Technologies, Inc.

Pan Wang

Wei Wan

Yang Liu

Xuesheng Wang

A method for forming the active area includes the following operations. A semiconductor substrate is provided. A first mask layer and a second mask layer are sequentially formed on a surface of the semiconductor substrate, in which the second mask layer has an initial pattern for forming the active area. A sacrificial layer covering the second mask layer is formed. The sacrificial layer and a portion of the second mask layer are removed to form a third mask layer with a preset thickness, in which the preset thickness is less than an initial thickness of the second mask layer. The active area is formed through the third mask layer and the first mask layer.

Method for forming active area and method for forming semiconductor structure

A method for manufacturing the semiconductor structure includes: providing a substrate, in which active regions and isolation regions are formed; forming grooves in the active regions, which include first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves; and forming gate structures in the first grooves and the second grooves.

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Hefei, China

Pan Wang