Tsukuba, Japan

Osamu Ichikawa

This inventor holds 5 USPTO granted patents. Top assignees: Sumitomo Chemical Company, Limited, National Institute of Advanced Industrial Science and Technology, The University of Tokyo. Active years: 2005-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osamu Ichikawa. Retrieved from https://idiyas.com/inventor/osamu-ichikawa-w83zc223

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 17(Granted Patents)


Location History:

  • Chiba, JP (2013)
  • Tsukuba, JP (2005 - 2015)

Company Filing History:


Years Active: 2005-2015

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5 patents (USPTO):Explore Patents

Title: **Osamu Ichikawa: Innovator in Semiconductor Technology**

Introduction

Osamu Ichikawa is a distinguished inventor based in Tsukuba, Japan, known for his significant contributions to the field of semiconductor technology. With a portfolio of five patents, Ichikawa is at the forefront of innovations that enhance the efficiency and performance of semiconductor devices.

Latest Patents

Ichikawa's latest patents include a groundbreaking method of producing semiconductor wafers and a semiconductor wafer design. The patented method involves forming a compound semiconductor layer on a base wafer through epitaxial growth and cleansing the surface using a cleansing agent that contains a selenium compound. In this innovative approach, the cleansing agent may include substances such as water, ammonium, and ethanol. Moreover, when the compound semiconductor layer is composed of Indium Gallium Arsenide (InGaAs), the insulating layer is optimally made of Aluminum Oxide (AlO), with the preferred method of formation being Atomic Layer Deposition (ALD).

The semiconductor wafer developed by Ichikawa plays a crucial role in creating various types of devices, including heterojunction bipolar transistors (HBT) and field-effect transistors (FET). This complex wafer includes a first semiconductor, a carrier-trapping layer with electron or hole-trapping centers, a second semiconductor that acts as a channel, and a third semiconductor arranged in a specific stack configuration.

Career Highlights

Ichikawa has worked with prestigious organizations, including Sumitomo Chemical Company, Limited and the University of Tokyo. His tenure in these companies has equipped him with solid experience and expertise in the semiconductor domain, facilitating numerous advancements in technology.

Collaborations

During his career, Ichikawa has collaborated with esteemed colleagues, including Masahiko Hata and Mitsuru Takenaka. These collaborations have fostered an environment of innovation and creativity, enabling the development of advanced semiconductor solutions.

Conclusion

Osamu Ichikawa's innovative spirit and dedication to advancing semiconductor technology have led to invaluable contributions in the field. His patents reflect a commitment to excellence and a forward-thinking approach that continues to shape the future of electronics and semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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