The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Dec. 06, 2013
Sumitomo Chemical Company, Limited, Chuo-ku, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Chiyoda-ku, Tokyo, JP;
Masahiko Hata, Tsukuba, JP;
Osamu Ichikawa, Tsukuba, JP;
Yuji Urabe, Tsukuba, JP;
Noriyuki Miyata, Tsukuba, JP;
Tatsuro Maeda, Tsukuba, JP;
Tetsuji Yasuda, Tsukuba, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include HSeO. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InGaAs (0≦x≦1), the insulating layer is preferably made of AlO, and AlOis preferably formed by ALD.