The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Nov. 21, 2011
Applicant:

Osamu Ichikawa, Tsukuba, JP;

Inventor:

Osamu Ichikawa, Tsukuba, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8252 (2006.01); H01L 29/778 (2006.01); H01L 29/207 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/0237 (2013.01); H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 21/02538 (2013.01); H01L 21/02463 (2013.01); H01L 29/207 (2013.01); H01L 21/02461 (2013.01); H01L 29/812 (2013.01); H01L 21/02573 (2013.01); H01L 29/66462 (2013.01);
Abstract

A semiconductor wafer includes a first semiconductor, and a second semiconductor formed directly or indirectly on the first semiconductor. The second semiconductor contains a first impurity atom exhibiting p-type or n-type conductivity, and a second impurity atom selected such that the Fermi level of the second semiconductor containing both the first and second impurity atoms is closer to the Fermi level of the second semiconductor containing neither the first impurity atom nor the second impurity atom, than the Fermi level of the second semiconductor containing the first impurity atom is. For example, the majority carrier of the second semiconductor is an electron, and the Fermi level of the second semiconductor containing the first and second impurity atoms is lower than the Fermi level of the second semiconductor containing the first impurity atom.


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