The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Oct. 05, 2011
Applicant:

Osamu Ichikawa, Tsukuba, JP;

Inventor:

Osamu Ichikawa, Tsukuba, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 27/06 (2006.01); H01L 21/8252 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0605 (2013.01); H01L 21/8252 (2013.01); H01L 29/7371 (2013.01); H01L 29/7785 (2013.01); H01L 29/7786 (2013.01);
Abstract

There is provided a compound semiconductor wafer that is suitably used to form a plurality of different types of devices such as an HBT and an FET thereon. The semiconductor wafer includes a first semiconductor, a carrier-trapping layer that is formed on the first semiconductor and has an electron-trapping center or a hole-trapping center, a second semiconductor that is epitaxially grown on the carrier-trapping layer and serves as a channel in which a free electron or a free hole moves, and a third semiconductor including a stack represented by n-type semiconductor/p-type semiconductor/n-type semiconductor or represented by p-type semiconductor/n-type semiconductor/p-type semiconductor, where the stack is epitaxially grown on the second semiconductor.


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