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For the Inventor, By the Inventor

Yokohama, Japan

Osamu Hataishi

This inventor holds 7 USPTO granted patents. Top assignees: Fujitsu Corporation, Fijitsu Limited. Active years: 1980-1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osamu Hataishi. Retrieved from https://idiyas.com/inventor/osamu-hataishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 150(Granted Patents)


Location History:

  • Kawasaki, JP (1980)
  • Yokohama, JP (1982 - 1989)

Company Filing History:

goldMedal6 out of 39,378 
 
Fujitsu Corporation
 patents
silverMedal1 out of 25 
 
Fijitsu Limited
 patents

Years Active: 1980-1989

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7 patents (USPTO):Explore Patents
1. 4875085 - Semiconductor device with shallow n-type region with arsenic or antimony (1989-10-17),
2. 4629520 - Method of forming shallow n-type region with arsenic or antimony and (1986-12-16),
3. 4584025 - Process for fabricating a semiconductor on insulator semiconductor device (1986-04-22),
4. 4575925 - Method for fabricating a SOI type semiconductor device (1986-03-18),
5. 4376664 - Method of producing a semiconductor device (1983-03-15),
6. 4343080 - Method of producing a semiconductor device (1982-08-10),
7. 4231057 - Semiconductor device and method for its preparation (1980-10-28),

Title: The Innovative Mind of Osamu Hataishi

Introduction

Osamu Hataishi, an accomplished inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With a total of seven patents to his name, Hataishi has demonstrated a remarkable ability to innovate and advance the efficiency of semiconductor devices.

Latest Patents

Among his most recent patents are groundbreaking methods for forming shallow n-type regions in semiconductor devices. One of his notable inventions includes a method for creating a shallow n-type region of a semiconductor device, such as a bipolar transistor or a MOSFET. This process involves forming a first film containing arsenic or antimony on a silicon substrate, followed by the formation of a second film containing phosphorus on the first. Through heat treatment, the arsenic or antimony and phosphorus are diffused into the semiconductor substrate, defining the depth of the n-type region. This innovation plays a pivotal role in enhancing the performance of various semiconductor applications.

Career Highlights

Hataishi's professional journey has seen him collaborate with major players in the technology industry, notably Fujitsu Corporation. His work at Fujitsu has allowed him to contribute extensively to research and development in semiconductor technologies, helping to pave the way for advancements in this crucial sector.

Collaborations

Throughout his career, Hataishi has worked alongside talented individuals such as Yoshinobu Momma and Katsunobu Ueno. These collaborations have facilitated the exchange of ideas and fostered a productive environment for innovation in semiconductor research, further enhancing the overall impact of their work in the industry.

Conclusion

In conclusion, Osamu Hataishi's contributions to the field of semiconductor technology are laudable. His expertise, coupled with successful collaborations and a commitment to innovation, have not only led to valuable patents but also significantly influenced the future of semiconductor devices. As technology continues to evolve, Hataishi's work will undoubtedly remain relevant in shaping the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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