The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 1980
Filed:
Nov. 13, 1978
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 50 ; 357 47 ; 357 23 ; 357 55 ;
Abstract
An improved means and method for isolating semiconductor devices on a semiconductor substrate, comprising a shallow region formed between the semiconductor substrate and an epitaxial layer of each device, and between a buried layer of each device and an isolation region separating adjacent devices. The shallow region has conductivity type opposite to that of the semiconductor substrate and higher impurity concentration than that of the epitaxial layer.
Momma, Yoshinobu. (1980). Semiconductor device and method for its preparation (U.S. Patent No. 4231057). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4231057
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile