Sagamihara, Japan

Yoshinobu Momma

This inventor holds 5 USPTO granted patents. Top assignees: Fujitsu Corporation, Fijitsu Limited. Active years: 1980-1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshinobu Momma. Retrieved from https://idiyas.com/inventor/yoshinobu-momma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 67(Granted Patents)


Location History:

  • Sagamihara, JP (1980 - 1985)
  • Kitakami, JP (1985)

Company Filing History:


Years Active: 1980-1985

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5 patents (USPTO):Explore Patents

Title: The Innovations of Yoshinobu Momma

Introduction

Yoshinobu Momma is a notable inventor based in Sagamihara, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work has been instrumental in advancing the design and manufacturing processes of semiconductor devices.

Latest Patents

One of his latest patents is a method for producing a semiconductor device utilizing V-groove etching. This invention involves a semiconductor device that comprises at least one bipolar transistor and a VIP isolating layer formed in both an epitaxial layer and a semiconductor substrate. An impurity-introduced region, which has the same conductivity type as the semiconductor substrate, is formed to surround the V-groove. Additionally, a buried layer of the bipolar transistor comes into contact with the VIP isolating layer, effectively dividing the impurity-introduced region into two parts. One part is combined with a base region, while the other serves as a channel stopper.

Another significant patent is for a semiconductor device and a method of manufacturing the same. This invention features at least one bipolar transistor and at least one MIS FET integrated within a single semiconductor substrate. Each region of the bipolar transistor and the MIS FET has an electrode that shares the same conductivity type as the corresponding region, ensuring ohmic contact with the surface of each region.

Career Highlights

Yoshinobu Momma has worked with prominent companies in the technology sector, including Fujitsu Corporation and Fujitsu Limited. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Throughout his career, Yoshinobu has collaborated with talented individuals such as Osamu Hataishi and Yunosuke Kawabe. These partnerships have fostered a creative environment that has led to the development of innovative solutions in the semiconductor field.

Conclusion

Yoshinobu Momma's contributions to semiconductor technology through his patents and collaborations highlight his importance as an inventor. His work continues to influence the industry and pave the way for future advancements in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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