The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1986
Filed:
Nov. 28, 1984
Applicant:
Inventors:
Kazuhiro Kanbara, Kawasaki, JP;
Osamu Hataishi, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29578 ; 2957 / ; 2957 / ; 148 15 ; 148175 ; 148D / ; 148188 ; 357 49 ;
Abstract
A method for fabricating a connection to a deep buried layer of a bipolar transistor based on SOI technology. In such a method, an epitaxial layer is grown on a single crystalline island formed by recrystallizing a polycrystalline layer on an insulating layer. Then the side surface(s) of the epitaxial layer is tentatively exposed and a conduction path along the side surface(s) is formed extending from the upper surface of the epitaxial layer to the single crystalline island thereunder.
Kanbara, Kazuhiro. (1986). Method for fabricating a soi type semiconductor device (U.S. Patent No. 4575925). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4575925
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile