The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
May. 17, 1988
Katsunobu Ueno, Yokohama, JP;
Osamu Hataishi, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of forming a shallow n-type region of a semiconductor device such as a bipolar transistor and a MOS FET, including the steps of: forming a first film containing arsenic or antimony on a silicon substrate; forming a second film containing phosphorus on the first film; and diffusing the arsenic or antimony and the phosphorus into the semiconductor substrate out of the first and second films by heat-treatment. The diffused impurities of the arsenic or antimony and the phosphorus form the n-type region and the arsenic or antimony defines the depth of the n-type region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile