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For the Inventor, By the Inventor

Milan, Italy

Osama Khouri

This inventor holds 29 USPTO granted patents and 2 EPO patents, primarily in Non-Volatile Memory. Top assignees: Stmicroelectronics S.r.l., Ovonyx Inc., Hynix Semiconductor Inc.. Active years: 2001-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osama Khouri. Retrieved from https://idiyas.com/inventor/osama-khouri

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29

% Patents Active = 100.0


Average Co-Inventor Count = 3.4

ph-index = 11

Forward Citations = 770(Granted Patents)


Location History:

  • Milan, IT (2001 - 2009)
  • Milano, IT (2009)

Company Filing History:

goldMedal24 out of 5,691 
 
Stmicroelectronics S.r.l.
 patents
silverMedal5 out of 262 
 
Ovonyx Inc.
 patents
bronzeMedal1 out of 6,228 
 
Hynix Semiconductor Inc.
 patents
4. 5 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2009

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Areas of Expertise:
Phase Change Memory
Non-Volatile Memory
Charge Pump Circuit
Voltage Regulator
Memory Cell Architecture
Analog-to-Digital Conversion
Programmable Voltage Generator
Hierarchical Row Decoding
Reading Circuit
Capacitive Compensation
Voltage Booster
Low Power Consumption
29 patents (USPTO):Explore Patents
1. 7618840 - Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof (2009-11-17),
2. 7593247 - Electronic memory device having high integration density non-volatile memory cells and a reduced capacitive coupling (2009-09-22),
3. 7521989 - Distribution of an electric quantity through a circuit (2009-04-21),
4. 7471576 - Method of transferring data in an electrically programmable memory (2008-12-30),
5. 7324371 - Method of writing to a phase change memory device (2008-01-29),
6. 7319604 - Electronic memory device having high density non-volatile memory cells and a reduced capacitive interference cell-to-cell (2008-01-15),
7. 7298650 - Page buffer for a programmable memory device (2007-11-20),
8. 7176748 - Charge pump circuit with a brief settling time and high output voltage regulation precision (2007-02-13),
9. 7122824 - Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof (2006-10-17),
10. 7050328 - Phase change memory device (2006-05-23),
11. 7035142 - Non volatile memory device including a predetermined number of sectors (2006-04-25),
12. 7020014 - Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices (2006-03-28),
13. 6816404 - Architecture of a phase-change nonvolatile memory array (2004-11-09),
14. 6816001 - Low power charge pump circuit (2004-11-09),
15. 6788579 - Method for programming nonvolatile memory cells with program and verify algorithm using a staircase voltage with varying step amplitude (2004-09-07),

Title: The Innovations of Osama Khouri in the Field of Electronic Memory Devices

Introduction

Osama Khouri, located in Milan, Italy, is a distinguished inventor with an impressive portfolio of 29 patents. His work primarily focuses on the development of advanced electronic memory devices, showcasing his commitment to innovation in the technology sector.

Latest Patents

Khouri's latest patents include groundbreaking inventions that enhance the performance and efficiency of memory devices. One notable patent is the "Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof." This patent describes a contact structure for a PCM device characterized by an elongated formation, providing improved contact area dimensions critical for functionality.

Another significant patent is the "Electronic memory device having high integration density non-volatile memory cells and a reduced capacitive coupling." This flash NAND electronic memory device employs non-volatile cells and a relative programming method, facilitating high integration density on a semiconductor substrate. The innovative design organizes memory cells in sectors, enhancing efficiency and performance during programming, reading, or erasing operations.

Career Highlights

Osama Khouri has contributed his expertise to prominent companies within the technology industry. Notably, he has worked with STMicroelectronics S.r.l., a leading semiconductor manufacturer, where he has significantly advanced electronic component design. Additionally, his tenure at Ovonyx Inc. further underscores his dedication to innovation in memory technologies.

Collaborations

Throughout his career, Khouri has collaborated with talented professionals, including Rino Micheloni and Guido Torelli. These partnerships have fostered a creative environment that has led to valuable breakthroughs in the field of electronic memory devices.

Conclusion

Osama Khouri's contributions to the realm of electronic memory technologies are exemplified by his numerous patents and collaborative efforts. His innovative designs continue to influence the industry, paving the way for advancements in high integration density memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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