The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Dec. 12, 2002
Osama Khouri, Milan, IT;
Ferdinando Bedeschi, Taranto, IT;
Giorgio Bosisio, Robbiate, IT;
Fabio Pellizzer, Follina, IT;
Other;
Abstract
The phase-change nonvolatile memory array is formed by a plurality of memory cells extending in a first and in a second direction orthogonal to each other. A plurality of column-selection lines extend parallel to the first direction. A plurality of word-selection lines extend parallel to the second direction. Each memory cell includes a PCM storage element and a selection transistor. A first terminal of the selection transistor is connected to a first terminal of the PCM storage element, and the control terminal of the selection transistor is connected to a respective word-selection line. A second terminal of the PCM storage element is connected to a respective column-selection line, and a second terminal of the selection transistor is connected to a reference-potential region while reading and programming the memory cells.