Location History:
- Fukuoka, JP (2002 - 2003)
- Amagasaki, JP (2003)
Company Filing History:
Years Active: 2002-2003
Title: Noritoshi Hirano: Innovator in Semiconductor Technology
Introduction
Noritoshi Hirano is a prominent inventor based in Fukuoka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on improving the efficiency and reliability of semiconductor devices.
Latest Patents
Hirano's latest patents include innovative designs aimed at enhancing semiconductor performance. One of his notable inventions is a semiconductor device designed to eliminate voltage oscillation that can lead to malfunctions in peripheral equipment. This device features a pin structure with a carefully controlled impurity concentration gradient in the n layer, which helps suppress voltage oscillation when a reverse bias voltage is applied.
Another significant patent is for a diode that minimizes energy loss during reverse recovery operations. This diode is constructed with an N layer and a P layer within a silicon substrate. By strategically placing a cathode side P layer, Hirano's design increases the current density of reverse current and prevents sudden changes in resistance, thereby reducing voltage oscillation without increasing forward voltage.
Career Highlights
Hirano is currently employed at Mitsubishi Electric Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable for various applications.
Collaborations
Hirano has collaborated with notable colleagues, including Katsumi Satoh and Yoshihiro Yamaguchi. These partnerships have contributed to the development of cutting-edge technologies in the semiconductor field.
Conclusion
Noritoshi Hirano's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of more efficient and reliable semiconductor devices.