The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jul. 14, 2000
Noritoshi Hirano, Fukuoka, JP;
Katsumi Satoh, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage has a great value. An N layer and a P layer are formed in a semiconductor substrate such as silicon. Furthermore, a cathode side P layer is also formed facing a cathode electrode in a position on the N layer that a depletion layer extended during application of a reverse bias voltage does not reach. By providing the cathode side P layer , a current density of a reverse current obtained during a reverse recovery operation can be increased, the sudden change of a resistance component of a diode can be prevented and the generation of a voltage oscillation can be suppressed. The cathode side P layer has a diameter W of approximately 400 &mgr;m or less and a rate of an area of the cathode side P layer occupying a cathode surface is kept at approximately ⅖ or less. Consequently, it is possible to suppress the voltage oscillation without increasing a forward voltage and an energy loss produced during the reverse recovery operation.