The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2002
Filed:
Dec. 18, 2000
Yoshihiro Yamaguchi, Fukuoka, JP;
Takeaki Asaeda, Tokyo, JP;
Katsumi Satoh, Tokyo, JP;
Noritoshi Hirano, Fukuoka, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The current-limiting device includes a silicon substrate having surfaces opposite to each other, and two electrodes deposited respectively on the opposite surfaces of the silicon substrate. The silicon substrate is of a three-layered structure including an N− layer of a low impurity density and an N+ layers of a high impurity density formed respectively on opposite surfaces of the N− layer . The electrodes , are deposited on an outer surface of each of the N+ layers remote from the N− layer . The constant current substantially flows in the current-limiting device if the applied voltage is higher than a predetermined value.