The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jul. 18, 2000
Noritoshi Hirano, Fukuoka, JP;
Katsumi Satoh, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An object is to obtain a semiconductor device having a PN junction which can suppress voltage oscillation without exerting any adverse effects. The film thickness of the N layer ( ) is set to satisfy both of a first condition that the depletion layer extending in the N layer ( ) from the PN junction between the N layer ( ) and the P layer ( ) does not reach the N layer ( ) when a reverse voltage of about ½ to ⅔ of the voltage blocking capability of the diode is applied and a second condition that the depletion layer reaches the N layer ( ) when a reverse voltage exceeding about ⅔ of the voltage blocking capability is applied. Further, the impurity concentration (specific resistance) of the N layer ( ) is set so that the electric field which acts on the depletion layer when the reverse bias voltage is set equivalent to the voltage blocking capability does not exceed the maximum field strength of silicon.